Evaluation of the interfacial resistance between carbon nanotube and silicon by using molecular dynamics simulations

Author

Platek, Bartosz ; Falat, Tomasz ; Felba, Jan

Author_Institution

Wroclaw Univ. of Technol., Wrocław, Poland

fYear

2014

fDate

7-11 May 2014

Firstpage

70

Lastpage

74

Abstract

This paper is aimed to the evaluation of interfacial thermal resistance between carbon nanotube and crystal of silicon by using molecular dynamics simulation. The calculations were executed by implemented algorithm for enforcing the heat flow in the model (PERL script language) in Forcite module of Materials Studio software (Accelrys, Software Inc.). Two models of the interface between carbon nanotube and silicon rod were proposed. The first one was with closed ends of CNT and the second one with opened ends CNT bonded to the silicon.

Keywords

carbon nanotubes; elemental semiconductors; molecular dynamics method; silicon; thermal conductivity; thermal resistance; C-Si; CNT; Forcite module; carbon nanotube; heat flow; implemented algorithm; interfacial thermal resistance; material studio software; molecular dynamics simulation; silicon rod; Carbon nanotubes; Heating; Kinetic energy; Silicon; Software; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Technology (ISSE), Proceedings of the 2014 37th International Spring Seminar on

Conference_Location

Dresden

Type

conf

DOI

10.1109/ISSE.2014.6887565

Filename

6887565