Title :
Thermal properties of Ag sintered layer used as interconnect material in microelectronics packaging
Author :
Kisiel, Ryszard ; Platek, Bartosz ; Mysliwiec, Marcin
Author_Institution :
Inst. of Microelectron. & Optoelectron., Warsaw Univ. of Technol., Warsaw, Poland
Abstract :
The paper deals with the thermal properties of Ag sintered layer used as interconnect material for SiC die assembly to DBC substrate. In our investigation an IR camera were used for measurement of thermal properties of Ag sintered layers. The changes of thermal conductivity were measured in temperature range from 69°C up to 221°C. The thermal conductivity of Ag sintered layers thickness 15 μm, made from micro particles, a flake shape, was in the range 7-10 W/mK and is stable in this temperature range.
Keywords :
integrated circuit interconnections; integrated circuit packaging; silicon compounds; silver; sintering; thermal conductivity; wide band gap semiconductors; Ag; DBC substrate; IR camera; SiC; die assembly; interconnect material; microelectronics packaging; sintered layer thermal properties; size 15 mum; temperature 69 C to 221 C; thermal conductivity; thermal property measurement; Conductivity; Schottky diodes; Silicon carbide; Substrates; Temperature measurement; Thermal conductivity; Thermal resistance;
Conference_Titel :
Electronics Technology (ISSE), Proceedings of the 2014 37th International Spring Seminar on
Conference_Location :
Dresden
DOI :
10.1109/ISSE.2014.6887568
