Title :
Fabrication and optical properties of GaAs/InGaAs/GaAs core-multishell nanowire quantum well heterostructure
Author :
Xin Yan ; Xia Zhang ; Junshuai Li ; Sijia Wang ; Shuyu Fan ; Wei Wei ; Yongqing Huang ; Xiaomin Ren
Author_Institution :
State Key Lab. of Inf. Photonics & Opt. Commun., Beijing Univ. of Posts & Telecommun., Beijing, China
Abstract :
GaAs/InGaAs/GaAs core-multishell nanowire heterostructure with a thin InGaAs quantum well is fabricated. Photoluminescence of the quantum well exhibits a blue shift along the nanowire due to the difference of diffusion length between In and Ga.
Keywords :
III-V semiconductors; carrier lifetime; gallium arsenide; indium compounds; nanofabrication; nanowires; photoluminescence; semiconductor growth; semiconductor heterojunctions; semiconductor quantum wells; spectral line shift; GaAs-InGaAs-GaAs; blue shift; core-multishell nanowire quantum well heterostructure; diffusion length; optical properties; photoluminescence; Gallium arsenide; Indium gallium arsenide; MOCVD; Optical device fabrication; Optical films; Photonics; Substrates;
Conference_Titel :
Optical Fibre Technology, 2014 OptoElectronics and Communication Conference and Australian Conference on
Conference_Location :
Melbourne, VIC
