DocumentCode
1795570
Title
Fabrication and optical properties of GaAs/InGaAs/GaAs core-multishell nanowire quantum well heterostructure
Author
Xin Yan ; Xia Zhang ; Junshuai Li ; Sijia Wang ; Shuyu Fan ; Wei Wei ; Yongqing Huang ; Xiaomin Ren
Author_Institution
State Key Lab. of Inf. Photonics & Opt. Commun., Beijing Univ. of Posts & Telecommun., Beijing, China
fYear
2014
fDate
6-10 July 2014
Firstpage
56
Lastpage
57
Abstract
GaAs/InGaAs/GaAs core-multishell nanowire heterostructure with a thin InGaAs quantum well is fabricated. Photoluminescence of the quantum well exhibits a blue shift along the nanowire due to the difference of diffusion length between In and Ga.
Keywords
III-V semiconductors; carrier lifetime; gallium arsenide; indium compounds; nanofabrication; nanowires; photoluminescence; semiconductor growth; semiconductor heterojunctions; semiconductor quantum wells; spectral line shift; GaAs-InGaAs-GaAs; blue shift; core-multishell nanowire quantum well heterostructure; diffusion length; optical properties; photoluminescence; Gallium arsenide; Indium gallium arsenide; MOCVD; Optical device fabrication; Optical films; Photonics; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fibre Technology, 2014 OptoElectronics and Communication Conference and Australian Conference on
Conference_Location
Melbourne, VIC
Type
conf
Filename
6887993
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