Title :
Athermal InP(110) twin-IQ modulator with planar single-RF electrode structure
Author :
Ogiso, Y. ; Nakanishi, Yoichiro ; Kanazawa, S. ; Yamada, Eiji ; Kikuchi, Naoya ; Tanobe, Hiromasa ; Shibata, Yoshitaka ; Kohtoku, M.
Author_Institution :
NTT Photonics Labs., NTT Corp., Atsugi, Japan
Abstract :
We report an athermal InP IQ modulator that exhibits a low optical insertion loss, a 3-dB EO bandwidth of over 25 GHz, and 56-Gb/s×2 QPSK modulations between temperatures of 20 and 80°C.
Keywords :
III-V semiconductors; electrodes; indium compounds; optical communication equipment; optical losses; optical modulation; quadrature phase shift keying; EO bandwidth; InP; QPSK modulations; athermal InP(110) twin-IQ modulator; low optical insertion loss; planar single-RE electrode structure; temperature 20 degC to 80 degC; High-speed optical techniques; Optical attenuators; Optical losses; Optical modulation; Optical waveguides; Phase shift keying;
Conference_Titel :
Optical Fibre Technology, 2014 OptoElectronics and Communication Conference and Australian Conference on
Conference_Location :
Melbourne, VIC
