DocumentCode
1795663
Title
Athermal InP(110) twin-IQ modulator with planar single-RF electrode structure
Author
Ogiso, Y. ; Nakanishi, Yoichiro ; Kanazawa, S. ; Yamada, Eiji ; Kikuchi, Naoya ; Tanobe, Hiromasa ; Shibata, Yoshitaka ; Kohtoku, M.
Author_Institution
NTT Photonics Labs., NTT Corp., Atsugi, Japan
fYear
2014
fDate
6-10 July 2014
Firstpage
172
Lastpage
173
Abstract
We report an athermal InP IQ modulator that exhibits a low optical insertion loss, a 3-dB EO bandwidth of over 25 GHz, and 56-Gb/s×2 QPSK modulations between temperatures of 20 and 80°C.
Keywords
III-V semiconductors; electrodes; indium compounds; optical communication equipment; optical losses; optical modulation; quadrature phase shift keying; EO bandwidth; InP; QPSK modulations; athermal InP(110) twin-IQ modulator; low optical insertion loss; planar single-RE electrode structure; temperature 20 degC to 80 degC; High-speed optical techniques; Optical attenuators; Optical losses; Optical modulation; Optical waveguides; Phase shift keying;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fibre Technology, 2014 OptoElectronics and Communication Conference and Australian Conference on
Conference_Location
Melbourne, VIC
Type
conf
Filename
6888037
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