Title :
10 GHz bandwidth of Si avalanche photodiode fabricated by standard 0.18 цm CMOS process
Author :
Iiyama, Koichi ; Shimotori, Toshiyuki ; Gyobu, Ryoichi ; Hishiki, Takuya ; Marayama, Takeo
Author_Institution :
Kanazawa Univ., Kanazawa, Japan
Abstract :
Silicon avalanche photodiode was fabricated by O.lSjum CMOS process and was characterized. The bandwidth of 10GHz with the sensitivity of 0.1 AW was achieved with the electrode spacing of 0.84/urn and the detection area of 10×10/urn2.
Keywords :
CMOS integrated circuits; avalanche photodiodes; electrodes; elemental semiconductors; silicon; CMOS process; Si; avalanche photodiode; bandwidth 10 GHz; detection area; electrode spacing; sensitivity; size 0.18 mum; Avalanche photodiodes; Bandwidth; CMOS process; Electrodes; Radio frequency; Silicon; Vertical cavity surface emitting lasers;
Conference_Titel :
Optical Fibre Technology, 2014 OptoElectronics and Communication Conference and Australian Conference on
Conference_Location :
Melbourne, VIC
