Title :
The influence of quantum-well depth on the optical modulation bandwidth of light emitting transistors
Author :
Yuan-Fu Hsu ; Hao-Hsiang Yang ; Chao-Hsin Wu
Author_Institution :
Grad. Inst. of Phontonics & Optoelectron., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
We investigate the optical bandwidth of light-emitting transistor by incorporating different depth of quantum wells (QWs). Shallower QWs emit relatively smaller optical output but perform better optical response. and have investigated the electrical and optical performance of HBLET.
Keywords :
heterojunction bipolar transistors; light emitting devices; optical modulation; quantum well devices; HBLET; electrical performance; hetrojunction bipolar transistor; light emitting transistors; optical modulation bandwidth; optical output; optical performance; optical response; quantum-well depth; Optical buffering; Optical device fabrication; Optical fibers; Optical modulation; Radiative recombination; Stimulated emission; Transistors;
Conference_Titel :
Optical Fibre Technology, 2014 OptoElectronics and Communication Conference and Australian Conference on
Conference_Location :
Melbourne, VIC
