Title :
Laterally-coupled distributed feedback laser with first-order gratings by interference lithography
Author :
Jingsi Li ; Cheng, James
Author_Institution :
Dept. of Electr. Eng., Univ. of Texas at Austin, Austin, TX, USA
Abstract :
The first laterally-coupled distributed feedback (DFB) laser with first-order sidewall gratings fabricated by optical interference lithography is experimentally demonstrated. The gratings were first etched into a dielectric mask on the planar top surface of an InP/AlGaInAs laser epiwafer, and then transferred to both sidewalls of a 2 μm deep ridge-waveguide structure using a novel self-aligned process. DFB ridge-waveguide lasers with a cavity length of 650 μm and width of 2.6 μm (with 300 nm gratings on both sidewalls) achieved single longitudinal mode continuous-wave operation, with a sidemode suppression ratio of 37 dB. The threshold current density is 1.7 kA/cm2 at room temperature, and the slope efficiency is 0.14 mW/mA per facet (uncoated).
Keywords :
III-V semiconductors; aluminium compounds; current density; distributed feedback lasers; gallium compounds; indium compounds; optical waveguides; photolithography; ridge waveguides; semiconductor lasers; DFB ridge-waveguide lasers; InP-AlGaInAs; deep ridge-waveguide structure; dielectric mask; first-order gratings; first-order sidewall gratings; laser epiwafer; laterally-coupled DFB laser; laterally-coupled distributed feedback laser; optical interference lithography; planar top surface; self-aligned process; sidemode suppression ratio; single-longitudinal mode continuous-wave operation; slope efficiency; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2013.1520