Title :
Carrier transport analysis on the modulation speed of light-emitting transistors
Author :
Hao-Hsiang Yang ; Hsiao-Lun Wang ; Chao-Hsin Wu
Author_Institution :
Grad. Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
Through microwave measurement followed by small-signal model analysis, we observe that the base transit time, τt, of the LET is reduced evidently from 90 ps to 20 ps when the collector current density increases from 2.43 kA/cm2 to 34.9 kA/cm2.
Keywords :
current density; heterojunction bipolar transistors; light emitting devices; microwave measurement; microwave transistors; HBT; base transit time; carrier transport analysis; collector current density; light-emitting transistors; microwave measurement; modulation speed; small-signal model analysis; time 20 ps; time 90 ps; Analytical models; Bandwidth; Heterojunction bipolar transistors; Microwave measurement; Optical modulation; Photonics;
Conference_Titel :
Optical Fibre Technology, 2014 OptoElectronics and Communication Conference and Australian Conference on
Conference_Location :
Melbourne, VIC
