• DocumentCode
    1795979
  • Title

    Carrier transport analysis on the modulation speed of light-emitting transistors

  • Author

    Hao-Hsiang Yang ; Hsiao-Lun Wang ; Chao-Hsin Wu

  • Author_Institution
    Grad. Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei, Taiwan
  • fYear
    2014
  • fDate
    6-10 July 2014
  • Firstpage
    633
  • Lastpage
    635
  • Abstract
    Through microwave measurement followed by small-signal model analysis, we observe that the base transit time, τt, of the LET is reduced evidently from 90 ps to 20 ps when the collector current density increases from 2.43 kA/cm2 to 34.9 kA/cm2.
  • Keywords
    current density; heterojunction bipolar transistors; light emitting devices; microwave measurement; microwave transistors; HBT; base transit time; carrier transport analysis; collector current density; light-emitting transistors; microwave measurement; modulation speed; small-signal model analysis; time 20 ps; time 90 ps; Analytical models; Bandwidth; Heterojunction bipolar transistors; Microwave measurement; Optical modulation; Photonics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Fibre Technology, 2014 OptoElectronics and Communication Conference and Australian Conference on
  • Conference_Location
    Melbourne, VIC
  • Type

    conf

  • Filename
    6888211
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1795979