DocumentCode
1796045
Title
Experimental and calculated gain characteristics of 1550nm-band QD-SOA grown on InP(311)B substrate for ultra-fast all-optical logic gate devices
Author
Matsumoto, Akiyoshi ; Takei, Y. ; Matsushita, Akira ; Akahane, Kouichi ; Matsushima, Y. ; Utaka, K.
Author_Institution
Fac. of Sci. & Eng., Waseda Univ., Tokyo, Japan
fYear
2014
fDate
6-10 July 2014
Firstpage
718
Lastpage
719
Abstract
We simulated gain characteristics of QD-SOA with 20-layer-stacked QDs structure grown on an InP(311)B substrate. Taking piezoelectric effect in the QDs into account, the results fitted to the obtained experimental data well.
Keywords
III-V semiconductors; indium compounds; optical logic; piezoelectric semiconductors; quantum dot lasers; semiconductor optical amplifiers; 20-layer-stacked QD structure; InP; InP(311)B substrate; QD-SOA; gain characteristics; piezoelectric effect; ultra-fast all-optical logic gate devices; Gain; Logic gates; Optical devices; Optical waveguides; Piezoelectric effect; Semiconductor optical amplifiers; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fibre Technology, 2014 OptoElectronics and Communication Conference and Australian Conference on
Conference_Location
Melbourne, VIC
Type
conf
Filename
6888244
Link To Document