DocumentCode
1796232
Title
The effect of charge-removing mechanism on the optical bandwidth enhancement in light-emitting transistors
Author
Yu-Wen Chern ; Hao-Hsiang Yang ; I-Te Lee ; Chao-Hsin Wu
Author_Institution
Grad. Inst. of Phontonics & Optoelectron., Nat. Taiwan Univ., Taipei, Taiwan
fYear
2014
fDate
6-10 July 2014
Firstpage
970
Lastpage
972
Abstract
We investigate the enhancement of optical bandwidth in light-emitting transistors by removing the excess stored charge through reversed base-collector voltage to maintain the tilted-charge distribution in the base active region.
Keywords
integrated optoelectronics; light emitting devices; phototransistors; base active region; charge-removing mechanism; light-emitting transistors; optical bandwidth enhancement; reversed base-collector voltage; tilted-charge distribution; Bandwidth; High-speed optical techniques; Microwave measurement; Optical buffering; Optical saturation; Stimulated emission; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fibre Technology, 2014 OptoElectronics and Communication Conference and Australian Conference on
Conference_Location
Melbourne, VIC
Type
conf
Filename
6888340
Link To Document