• DocumentCode
    1796344
  • Title

    Custom design of pinned photodiodes in standard CMOS technologies for time-of-flight sensors

  • Author

    Illade-Quinteiro, J. ; Brea, V.M. ; Lopez, Pierre ; Cabello, D. ; Domenech-Asensi, G.

  • Author_Institution
    Centro de Investig. en Tecnoloxias da Informacion (CITIUS), Univ. of Santiago de Compostela, Santiago de Compostela, Spain
  • fYear
    2014
  • fDate
    29-31 July 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this paper two different structures for custom design of pinned photodiodes in standard CMOS technologies are presented and analyzed in terms of dark current.
  • Keywords
    CMOS integrated circuits; dark conductivity; photodiodes; time of flight spectra; custom design; dark current; pinned photodiodes; standard CMOS technologies; time-of-flight sensors; CMOS integrated circuits; CMOS technology; Dark current; Junctions; Photodiodes; Semiconductor device modeling; Standards;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Cellular Nanoscale Networks and their Applications (CNNA), 2014 14th International Workshop on
  • Conference_Location
    Notre Dame, IN
  • Type

    conf

  • DOI
    10.1109/CNNA.2014.6888603
  • Filename
    6888603
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1796344