Fabrication and characterization of tungsten-oxide-based memristors for neuromorphic circuits

Author

Wheeler, D. ; Alvarado-Rodriguez, Ivan ; Elliott, K. ; Kally, James ; Hermiz, John ; Hunt, Hugh ; Hussain, Tauqeer ; Srinivasa, Narayan

Author_Institution

Microelectron. Lab., HRL Labs., LLC, Malibu, CA, USA

fYear

2014

fDate

29-31 July 2014

Firstpage

1

Lastpage

2

Abstract

We report a fabrication process and electrical results for tungsten-oxide-based memristors compatible with CMOS-based neuromorphic circuits. Memristor crossbar arrays are fabricated on partially-processed wafers from a CMOS foundry to form hybrid FET-memristor circuits that can serve as analog memory elements for synaptic weight storage. Successful integration is demonstrated through the programming and reading of memristor crossbar array elements addressed through a CMOS multiplexer/demultiplexer.

Keywords

CMOS analogue integrated circuits; memristors; neural nets; tungsten compounds; CMOS foundry; CMOS multiplexer-demultiplexer; CMOS-based neuromorphic circuits; analog memory elements; hybrid FET-memristor circuits; memristor crossbar array element programming; memristor crossbar array element reading; memristor crossbar arrays; partially-processed wafers; synaptic weight storage; tungsten-oxide-based memristor characterization; tungsten-oxide-based memristor fabrication; CMOS integrated circuits; Electrodes; Fabrication; Memristors; Neuromorphics; Programming; Tungsten;

fLanguage

English

Publisher

ieee

Conference_Titel

Cellular Nanoscale Networks and their Applications (CNNA), 2014 14th International Workshop on

Conference_Location

Notre Dame, IN

Type

conf

DOI

10.1109/CNNA.2014.6888611

Filename

6888611