Title :
Switching layer engineering for memristive devices
Author :
Hao Jiang ; Can Li ; Qiangfei Xia
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Massachusetts, Amherst, MA, USA
Abstract :
We used reactive sputtering as a tool to deposit transition metal oxide materials with tunable chemical composition and electrical properties. We further developed heterogeneous bilayer memristive devices with designed switching properties. Finally, we developed a low voltage memristive based on chemically produced, 1 nm thick silicon oxide.
Keywords :
chemical analysis; memristors; silicon compounds; sputter deposition; transition metals; SiO; electrical properties; heterogeneous bilayer memristive devices; low voltage memristive devices; reactive sputtering; size 1 nm; switching layer engineering; transition metal oxide material deposition; tunable chemical composition; Switches; SiOx devices; bilayer devices; memristor; reactive sputtering; switching layer;
Conference_Titel :
Cellular Nanoscale Networks and their Applications (CNNA), 2014 14th International Workshop on
Conference_Location :
Notre Dame, IN
DOI :
10.1109/CNNA.2014.6888616
