DocumentCode :
1796386
Title :
Implementation of a memristor-based solid-state memcapacitive device
Author :
Flak, Jaroslaw ; Raantala, Arto ; Haatainen, Tomi ; Prunnila, Mika ; Laiho, Mika
Author_Institution :
VTT Tech. Res. Centre of Finland, Espoo, Finland
fYear :
2014
fDate :
29-31 July 2014
Firstpage :
1
Lastpage :
2
Abstract :
Memcapacitor is a new type of circiut element which can be useful in a wide range of applications including memory, tunable analog circuits, and analog neural networks [8]. It can be realized as a micro- or nanoscale solid-state device, possibly implemented within (or post-processed on top of) a CMOS chip. The approach based on combination of a memristor and a typical MIM capacitor is promising as it can benefit from the fabrication techniques being developed and used for memristors. These techniques are rapidly maturing, enabling large capacity resistive memory (ReRAM) chips [9], [10]. However, the memristor-based memcapacitors will require more complex techniques for their programming than memristors, because their impedance is frequency dependent [7] and the parasitics induced by direct access to the middle electrode may potentially disable some applications.
Keywords :
CMOS memory circuits; MIM devices; capacitors; memristors; random-access storage; CMOS chip; MIM capacitor; ReRAM chips; analog neural networks; circiut element; fabrication techniques; large capacity resistive memory chips; memory; memristor-based solid-state memcapacitive device; microscale solid-state device; middle electrode; nanoscale solid-state device; tunable analog circuits; Capacitance; Electrodes; Fabrication; MIM capacitors; Memristors; Nonvolatile memory; Resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Cellular Nanoscale Networks and their Applications (CNNA), 2014 14th International Workshop on
Conference_Location :
Notre Dame, IN
Type :
conf
DOI :
10.1109/CNNA.2014.6888633
Filename :
6888633
Link To Document :
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