Title :
CMOS-based nanopower memristor dynamics emulator
Author :
Koymen, Itir ; Drakakis, Emmanuel M.
Author_Institution :
Dept. of Bioeng., Imperial Coll. London, London, UK
Abstract :
An active weak-inversion CMOS-based memristor emulator is proposed. The circuit is composed of a grounded capacitor and two log-domain exponential transconductors (E cells). It consumes a few nanowatts of power from a 1V power supply. Simulation results confirm the realisation of pinched hysteresis loops characterised by the zero crossing property of the memristor. The effects of varying capacitor values and varying input amplitude and frequency are also simulated. The simple emulator presented here offers the possibility of realising memristor dynamics when high yield memristor processes are not accessible.
Keywords :
CMOS integrated circuits; capacitors; hysteresis; memristors; nanoelectronics; CMOS-based nanopower memristor dynamics emulator; E cells; active weak-inversion CMOS-based memristor emulator; grounded capacitor; log-domain exponential transconductor; pinched hysteresis loop realisation; varying capacitor value effect; varying input amplitude effect; varying input frequency effect; voltage 1 V; zero crossing property; CMOS integrated circuits; Capacitors; Hysteresis; Memristors; Nanoscale devices; Power supplies; Semiconductor device modeling; CMOS; MOS-capacitor; analog model; e-cell; emulator; memristor;
Conference_Titel :
Cellular Nanoscale Networks and their Applications (CNNA), 2014 14th International Workshop on
Conference_Location :
Notre Dame, IN
DOI :
10.1109/CNNA.2014.6888637
