DocumentCode :
1796942
Title :
A body bias generator with wide supply-range down to threshold voltage for within-die variability compensation
Author :
Kamae, Norihiro ; Mahfuzul Islam, A.K.M. ; Tsuchiya, Akira ; Onodera, Hidetoshi
Author_Institution :
Dept. of Commun. & Comput. Eng., Kyoto Univ., Kyoto, Japan
fYear :
2014
fDate :
10-12 Nov. 2014
Firstpage :
53
Lastpage :
56
Abstract :
A body bias generator (BBG) for fine-grain body biasing (FGBB) that can operate under wide supply-range is proposed. While FGBB is effective in reducing variability and power consumption, a number of BBGs are required on a die and therefore simplified design of BBGs is necessary. This paper proposes a cell-based design of a BBG that generates forward and reverse body bias voltages only from a core supply voltage ranging from the near threshold of 500mV to the nominal voltage of 1.2V. This wide operating range is achieved by a low voltage error amplifier with a Vth biasing scheme achieved by internal switched-capacitor charge pumping. We fabricated the forward/reverse BBG in a 65nm low power CMOS process to control 0.22mm2 of core circuit with the area overhead of 2.3% for the BBG.
Keywords :
CMOS integrated circuits; amplifiers; charge pump circuits; low-power electronics; system-on-chip; BBG; FGBB; Vth biasing scheme; body bias generator; cell-based design; core supply voltage; fine-grain body biasing; forward body bias voltages; internal switched-capacitor charge pumping; low power CMOS process; low voltage error amplifier; reverse body bias voltages; size 65 nm; voltage 500 mV to 1.2 V; within-die variability compensation; Capacitors; Charge pumps; Conferences; Generators; Substrates; Threshold voltage; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference (A-SSCC), 2014 IEEE Asian
Conference_Location :
KaoHsiung
Print_ISBN :
978-1-4799-4090-5
Type :
conf
DOI :
10.1109/ASSCC.2014.7008858
Filename :
7008858
Link To Document :
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