DocumentCode
1797006
Title
A 3 Gb/s 64-QAM E-band direct-conversion transmitter in 40-nm CMOS
Author
Dixian Zhao ; Reynaert, Patrick
Author_Institution
ESAT-MICAS, KU Leuven, Leuven, Belgium
fYear
2014
fDate
10-12 Nov. 2014
Firstpage
177
Lastpage
180
Abstract
This paper describes a fully integrated E-band transmitter (TX) in 40-nm CMOS. Circuit, layout and calibration techniques are presented to suppress the LO feed-through (LOFT) and I/Q imbalance over both 71-76 and 81-86 GHz bands. A systematic design methodology is proposed for the millimeter-wave poly-phase filter (PPF) to achieve lowest I/Q imbalance with minimum EM simulations. The 40-nm E-band transmitter achieves a measured output power of 12 dBm and TX efficiency of 15% with about 15 GHz bandwidth. Measured from 3 chips, the transmitter features an un-calibrated I/Q imbalance of less than -30 dB from 62.5 to 85.5 GHz. The calibration circuits further reduce the I/Q imbalance by 3-5 dB and ensure the LOFT less than -30 dBc over more than 30 dB output dynamic range. The presented TX achieves 3-Gb/s 64-QAM across the complete E-band.
Keywords
CMOS integrated circuits; calibration; integrated circuit layout; microwave integrated circuits; millimetre wave filters; quadrature amplitude modulation; radio transmitters; 64-QAM E-band direct-conversion transmitter; CMOS; E-band transmitter; bit rate 3 Gbit/s; calibration circuits; calibration techniques; frequency 62.5 GHz to 85.5 GHz; frequency 71 GHz to 76 GHz; frequency 81 GHz to 86 GHz; millimeter-wave poly-phase filter; size 40 nm; CMOS integrated circuits; Calibration; Modulation; Power amplifiers; Power measurement; Semiconductor device measurement; Transmitters; CMOS; E-band; I/Q imbalance; LO feed-through; calibration; mixer; poly-phase filter; power amplifier; transmitter;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference (A-SSCC), 2014 IEEE Asian
Conference_Location
KaoHsiung
Print_ISBN
978-1-4799-4090-5
Type
conf
DOI
10.1109/ASSCC.2014.7008889
Filename
7008889
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