Title :
A 3 Gb/s 64-QAM E-band direct-conversion transmitter in 40-nm CMOS
Author :
Dixian Zhao ; Reynaert, Patrick
Author_Institution :
ESAT-MICAS, KU Leuven, Leuven, Belgium
Abstract :
This paper describes a fully integrated E-band transmitter (TX) in 40-nm CMOS. Circuit, layout and calibration techniques are presented to suppress the LO feed-through (LOFT) and I/Q imbalance over both 71-76 and 81-86 GHz bands. A systematic design methodology is proposed for the millimeter-wave poly-phase filter (PPF) to achieve lowest I/Q imbalance with minimum EM simulations. The 40-nm E-band transmitter achieves a measured output power of 12 dBm and TX efficiency of 15% with about 15 GHz bandwidth. Measured from 3 chips, the transmitter features an un-calibrated I/Q imbalance of less than -30 dB from 62.5 to 85.5 GHz. The calibration circuits further reduce the I/Q imbalance by 3-5 dB and ensure the LOFT less than -30 dBc over more than 30 dB output dynamic range. The presented TX achieves 3-Gb/s 64-QAM across the complete E-band.
Keywords :
CMOS integrated circuits; calibration; integrated circuit layout; microwave integrated circuits; millimetre wave filters; quadrature amplitude modulation; radio transmitters; 64-QAM E-band direct-conversion transmitter; CMOS; E-band transmitter; bit rate 3 Gbit/s; calibration circuits; calibration techniques; frequency 62.5 GHz to 85.5 GHz; frequency 71 GHz to 76 GHz; frequency 81 GHz to 86 GHz; millimeter-wave poly-phase filter; size 40 nm; CMOS integrated circuits; Calibration; Modulation; Power amplifiers; Power measurement; Semiconductor device measurement; Transmitters; CMOS; E-band; I/Q imbalance; LO feed-through; calibration; mixer; poly-phase filter; power amplifier; transmitter;
Conference_Titel :
Solid-State Circuits Conference (A-SSCC), 2014 IEEE Asian
Conference_Location :
KaoHsiung
Print_ISBN :
978-1-4799-4090-5
DOI :
10.1109/ASSCC.2014.7008889