• DocumentCode
    1797010
  • Title

    54 GHz CMOS LNAs with 3.6 dB NF and 28.2 dB gain using transformer feedback Gm-boosting technique

  • Author

    Shita Guo ; Tianzuo Xi ; Ping Gui ; Jing Zhang ; Wooyeol Choi ; Kenneth, K.O. ; Yanli Fan ; Daquan Huang ; Gu, R. ; Morgan, Mark

  • Author_Institution
    Dept. of Electr. Eng., Southern Methodist Univ., Dallas, TX, USA
  • fYear
    2014
  • fDate
    10-12 Nov. 2014
  • Firstpage
    185
  • Lastpage
    188
  • Abstract
    This paper presents a novel topology of low-noise amplifier (LNA) with noise reduction and gain improvement. A transformer feedback gm-boosting technique is proposed in a single-ended cascode LNA to reduce the noise figure (NF) and improve the gain simultaneously. Two 54 GHz single-ended cascode LNAs, with transformer and transmission-line for matching, respectively, are demonstrated to verify this technique. Fabricated in a 65 nm CMOS process, the transformer-based (TF-based) LNA exhibits a minimum noise figure (NF) of 3.6 dB at 53.5 GHz and a highest power gain of 28.2 dB at 54 GHz in measurement. To our best knowledge, this LNA has the best noise figure and power gain among all the published V-band CMOS LNAs. The transmission-line-based (TL-based) LNA exhibits a minimum noise figure of 3.8 dB at 53.9 GHz and a highest power gain of 25.4 dB at 54.2 GHz in measurement. Both the LNAs consume 18 mA from a power supply of 1.1 V.
  • Keywords
    CMOS integrated circuits; low noise amplifiers; millimetre wave amplifiers; millimetre wave integrated circuits; V-band CMOS LNA; current 18 mA; frequency 53.5 GHz; frequency 53.9 GHz; frequency 54 GHz; frequency 54.2 GHz; gain 25.4 dB; gain 28.2 dB; gain 3.8 dB; low-noise amplifier; noise figure; noise figure 3.6 dB; noise reduction; size 65 nm; transformer feedback Gm-boosting; transmission-line; voltage 1.1 V; CMOS integrated circuits; Gain; Noise; Noise figure; Topology; Transistors; Low-noise amplifier (LNA); V-band; noise figure (NF); power gain; transformer; transmission-line;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference (A-SSCC), 2014 IEEE Asian
  • Conference_Location
    KaoHsiung
  • Print_ISBN
    978-1-4799-4090-5
  • Type

    conf

  • DOI
    10.1109/ASSCC.2014.7008891
  • Filename
    7008891