• DocumentCode
    1798265
  • Title

    Development of combined surface activated bonding (SAB) method for hydrophilic wafer bonding

  • Author

    He, Ruisi ; Fujino, Masahisa ; Suga, Takashi ; Yamauchi, Akira

  • Author_Institution
    Dept. of Precision Eng., Univ. of Tokyo, Tokyo, Japan
  • fYear
    2014
  • fDate
    4-6 Nov. 2014
  • Firstpage
    67
  • Lastpage
    70
  • Abstract
    A new combined surface activated bonding (SAB) technique has been developed for hydrophilic wafer bonding in vacuum. Relative humidity in the bonding environment is not necessary in this novel hydrophilic bonding approach.
  • Keywords
    surface treatment; wafer bonding; SAB method; hydrophilic wafer bonding; relative humidity; surface activated bonding method; Bonding; Ion beams; Plasma temperature; Silicon; Surface treatment; Wafer bonding; combined surface activated bonding (SAB); hydrophilic bonding in vacuum; wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    CPMT Symposium Japan (ICSJ), 2014 IEEE
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-1-4799-6194-8
  • Type

    conf

  • DOI
    10.1109/ICSJ.2014.7009611
  • Filename
    7009611
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1798265