Title :
Development of combined surface activated bonding (SAB) method for hydrophilic wafer bonding
Author :
He, Ruisi ; Fujino, Masahisa ; Suga, Takashi ; Yamauchi, Akira
Author_Institution :
Dept. of Precision Eng., Univ. of Tokyo, Tokyo, Japan
Abstract :
A new combined surface activated bonding (SAB) technique has been developed for hydrophilic wafer bonding in vacuum. Relative humidity in the bonding environment is not necessary in this novel hydrophilic bonding approach.
Keywords :
surface treatment; wafer bonding; SAB method; hydrophilic wafer bonding; relative humidity; surface activated bonding method; Bonding; Ion beams; Plasma temperature; Silicon; Surface treatment; Wafer bonding; combined surface activated bonding (SAB); hydrophilic bonding in vacuum; wafer bonding;
Conference_Titel :
CPMT Symposium Japan (ICSJ), 2014 IEEE
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-6194-8
DOI :
10.1109/ICSJ.2014.7009611
