Title :
Electro-migration behavior in fine pitch SnBi eutectic solder bump interconnections
Author :
Murayama, Kei ; Aizawa, Mitsuhiro ; Kurihara, Takashi
Author_Institution :
R&D Div., Interconnect Technol. Dev. Dept., Shinko Electr. Ind. Co., Ltd., Nagano, Japan
Abstract :
Electro-migration behavior in fine pitch SnBi eutectic solder bump interconnections were investigated. In the case of fine pitch SnBi eutectic solder bump (dia. 25 micro meter), maximum increasing-rate of resistance was significant less than that of larger seized bump structure (Dia. 75 micro meter).
Keywords :
electromigration; integrated circuit interconnections; solders; tin compounds; electromigration behavior; fine pitch SnBi eutectic solder bump interconnections; size 25 mum; size 75 mum; Bismuth; Current density; Gold; Nickel; Resistance; Substrates; Tin; Electro-migration; Fine pitch bump; SnBi solder;
Conference_Titel :
CPMT Symposium Japan (ICSJ), 2014 IEEE
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-6194-8
DOI :
10.1109/ICSJ.2014.7009612
