Photosensitive insulation coating for a copper redistribution layer process

Author

Matsutani, Hiroshi ; Mitsukura, Kazuyuki ; Makino, Tatsuya ; Duval, Fabrice ; Detalle, Mikael ; Miller, Alice ; Beyne, Eric

Author_Institution

Tsukuba Res. Lab., Hitachi Chem., Tsukuba, Japan

fYear

2014

fDate

4-6 Nov. 2014

Firstpage

111

Lastpage

113

Abstract

Redistribution on a through-silicon via (TSV) with a copper interconnection and dielectric layer is one of the key components for a silicon-based interposer. In this paper, we report lithographic and mechanical performance for a positive-tone photosensitive insulation coating, CA6001B. Minimum resolution for CA6001B is 3 μm determined by electrical measurement with a test wafer having a copper redistribution and the patterned insulation layers. The CA6001B is one of the promising dielectric coatings for interposers possessing TSV and redistribution layer (RDL) structures.

Keywords

coating techniques; copper; dielectric materials; insulation; integrated circuit interconnections; mechanical properties; photolithography; three-dimensional integrated circuits; CA6001B; RDL structures; copper interconnection; copper redistribution layer process; dielectric layer coatings; electrical measurement; interposer processing TSV; lithographic performance; mechanical performance; minimum resolution; patterned insulation layers; positive-tone photosensitive insulation coating; test wafer processing; through-silicon via; Coatings; Copper; Dielectrics; Electric variables measurement; Insulation; Silicon; Through-silicon vias; TSV; dielectric; interposer; redistribution; resolution; stress;

fLanguage

English

Publisher

ieee

Conference_Titel

CPMT Symposium Japan (ICSJ), 2014 IEEE

Conference_Location

Kyoto

Print_ISBN

978-1-4799-6194-8

Type

conf

DOI

10.1109/ICSJ.2014.7009622

Filename

7009622