• DocumentCode
    179860
  • Title

    Influence of nonequilibrium temperature and charge carriers on the Ohm´s law in a bipolar semiconductor

  • Author

    Gurevich, Yuri G. ; Lashkevych, Igor

  • Author_Institution
    Dept. de Fis., CINVESTAV-IPN, Mexico City, Mexico
  • fYear
    2014
  • fDate
    Sept. 29 2014-Oct. 3 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The linear electrical conductivity of a bipolar semiconductor which is connected to a metal from both sides is investigated in general case, i.e., when the influence of both nonequilibrium charge carriers (electrons and holes) and nonequilibrium temperature on transport of electrical charges is taken into account. Let us notice that the electrical and energy nonequilibriums arise automatically in a bipolar semiconductor when electrical current flows even in a linear approximation with respect to an electrical current. The expression for the electrical conductivity is obtained for a bipolar semiconductor which depends on the electrical conductivity of electrons and holes, the thermal conductivity, the bandgap, the lifetime of charge carriers, the surface recombination rate on a semiconductor-metal contact.
  • Keywords
    carrier lifetime; electron-hole recombination; energy gap; ohmic contacts; polar semiconductors; semiconductor-metal boundaries; surface conductivity; surface recombination; thermal conductivity; Ohm´s law; band gap; bipolar semiconductor; charge carrier lifetime; electrical charge transport; electrical current flow; electron-hole electrical conductivity; energy nonequilibriums; linear approximation; linear electrical conductivity; nonequilibrium charge carriers; nonequilibrium temperature; semiconductor-metal contact; surface recombination rate; thermal conductivity; Charge carrier processes; Conductivity; Electric potential; Radiative recombination; Thermal conductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Engineering, Computing Science and Automatic Control (CCE), 2014 11th International Conference on
  • Conference_Location
    Campeche
  • Print_ISBN
    978-1-4799-6228-0
  • Type

    conf

  • DOI
    10.1109/ICEEE.2014.6978262
  • Filename
    6978262