Light effect characterization of ISFET based pH sensor with Si3N4 gate insulator

The performance of ISFET based pH sensor device in testing and characterization process of light effect has been successfully done. The experimental setup was carried out by Agilent Technologies B1500A Semiconductor Device Analyzer with an additional readout interfacing circuit (ROIC). This paper reports the electrical characterization test i.e. current-voltage (I-V) measurement and sensitivity, drift and hysteresis test of the fabricated sensor. The I-V measurement was done in light and dark conditions but the drift and hysteresis characterizations were done in dark condition to avoid the influence of light. This experiment used the standard buffer solution to observe the characteristic of the device. From the experimental result, it found that the sensor performance has a light effect due to the light exposure. Drift and hysteresis test using the ROIC showed a good performance in term of the durability, reliability and accuracy of the sensor. The discussion of the light effect on the sensor performance is presented.