DocumentCode
1799088
Title
Advances in triple junction photo diodes
Author
Schidl, Stefan ; Hofbauer, Michael ; Schneider-Hornstein, Kerstin ; Zimmermann, Horst
fYear
2014
fDate
8-9 May 2014
Firstpage
1
Lastpage
4
Abstract
Triple junction photo diodes are a type of photo diodes where three pn-junctions are vertically stacked on top of each other. Each of these pn-junctions has a distinctive spectral responsivity. Therefore, this type of photo diode is very useful for attaining a color sensitive photo diode for sensor applications. These diodes can be implemented in different standard semiconductor processes. In this work we compare three different implementations in BiCMOS (0.6 μm) and CMOS (90 nm and 0.35 μm) processes.
Keywords
BiCMOS integrated circuits; CMOS integrated circuits; integrated optoelectronics; photodiodes; BiCMOS; CMOS; color-sensitive photodiode; pn-junctions; sensor applications; size 90 nm to 0.6 mum; spectral responsivity; standard semiconductor processes; triple junction photodiodes; BiCMOS integrated circuits; CMOS integrated circuits; CMOS process; Color; Junctions; Microwave filters; Semiconductor diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Systems Symposium (MESS), 2014
Conference_Location
Vienna
Type
conf
DOI
10.1109/MESS.2014.7010251
Filename
7010251
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