DocumentCode :
1799378
Title :
AC and transient analysis of SJ VDMOS
Author :
Kondekar, P.N. ; Naugarhiya, Alok
Author_Institution :
Electron. & Commun. Eng., PDPM IIITDMJ, Jabalpur, India
fYear :
2014
fDate :
14-15 Nov. 2014
Firstpage :
1
Lastpage :
3
Abstract :
In this paper, first time we propose a simple and accurate high frequency small signal model for Superjunction (SJ) Double Diffused MOS (VDMOS). Using this model we obtained the maximum switching frequency (fT) and it results are validated by numerical numerous simulator. Further, we have analyzed transient, ac and switching frequency response of the SJ VDMOS.
Keywords :
MOSFET; semiconductor device models; transient analysis; transient response; AC analysis; SJ VDMOS; high frequency small signal model; maximum switching frequency; superjunction double diffused MOS; switching frequency response; transient analysis; transient response; Analytical models; Capacitance; Junctions; Logic gates; MOSFET; Switching frequency; Transient analysis; Area Specific Device Capacitance; BV; RDSonA; RESURF; SJ; SJ body diode; fT;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics and Telecommunications (ISETC), 2014 11th International Symposium on
Conference_Location :
Timisoara
Print_ISBN :
978-1-4799-7266-1
Type :
conf
DOI :
10.1109/ISETC.2014.7010737
Filename :
7010737
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1799378
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