Single-Event Latchup Modeling Based on Coupled Physical and Electrical Transient Simulations in CMOS Technology

This work presents a SEL modeling based on physical simulations performed by MUSCA SEP3 and electrical simulations. This approach leads to use the layout description and process information (from TCAD, design or ITRS hypotheses) of a CMOS inverter cell to extract the characteristics of the parasitic circuitry. This approach is totally compatible with the Monte Carlo tool, MUSCA SEP3, with the aim to propose estimations of SEL susceptibility as well in terms of cross section, as sensitivity mapping. The latchup transient response is calculated and compared with heavy ion and TPA experimental measurements. The good agreements are shown in terms of latchup current and the electrical steps leading to the SEL occurrence. Complementary comparisons of SEL sensitive area mapping for TPA irradiation are presented and assessed. The ability of the model to take into account the temperature impact on the SEL sensitivity is presented and discussed.