Effect of rf power on structural, optical and morphological properties of ultrathin undoped ZnO films deposited by rf magnetron sputtering

Author

Vinoth Kumar, J. ; Maldonado, A. ; Matsumoto, Y. ; de la L Olvera, M.

Author_Institution

Dept. de Ing. Electr., CINVESTAV-IPN, Mexico City, Mexico

fYear

2014

fDate

Sept. 29 2014-Oct. 3 2014

Firstpage

1

Lastpage

4

Abstract

Undoped ZnO Ultra thin films were deposited on glass substrates by rf magnetron sputtering. Thin films were deposited at various rf powers 50, 75, 100 and 125W. The measured thickness of the films were less than 50nm. Structural properties were studied by X-ray diffraction (XRD) which confirmed that the films were crystalline with a (002) preferential orientation. The optical properties were studied by UV-Vis spectrophotometry in the 300-1000nm range, obtaining an average transmittance around 70 %. The AFM characterization revealed that rms roughness value increases with rf power.

Keywords

II-VI semiconductors; X-ray diffraction; atomic force microscopy; semiconductor thin films; sputter deposition; surface roughness; ultraviolet spectra; visible spectra; wide band gap semiconductors; zinc compounds; (002) preferential orientation; AFM; UV-vis spectrophotometry; X-ray diffraction; XRD; ZnO-SiO₂; average transmittance; crystallines; glass substrates; morphological properties; optical properties; power 100 W; power 125 W; power 50 W; power 75 W; rf magnetron sputtering; rf power effect; roughness; structural properties; ultrathin undoped zinc oxide films deposition; wavelength 300 nm to 1000 nm; Magnetic films; Optical films; Radio frequency; Sputtering; Substrates; Zinc oxide; ZnO; rf power; sputtering; ultra thin films;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering, Computing Science and Automatic Control (CCE), 2014 11th International Conference on

Conference_Location

Campeche

Print_ISBN

978-1-4799-6228-0

Type

conf

DOI

10.1109/ICEEE.2014.6978324

Filename

6978324