Study of plasma chemistry in plasma doping processes

Author

Shu Qin ; Yuanzhong Zhou ; Chung Chan ; Jiqun Shao ; Denholm, Stewart

Author_Institution

Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA

fYear

1997

fDate

19-22 May 1997

Firstpage

151

Abstract

Summary form only given. An empirical-analytic approach has been used for the plasma chemistry analysis of plasma ion implantation (PII) doping experiments. Least square (LS) fittings of SIMS profiles have been performed to find the relationship between gas, plasma, and dose compositions in multi-species plasmas and to optimize gas recipes and process conditions. A dynamic sheath model of the multi-species plasma has been used as a basic function for fitting. Good consistence between modeling and experiments for BF/sub 3/ and PH/sub 3/ PII doping processes was present. A PDP1 plasma simulation verified the results of the modeling.

Keywords

ion implantation; least squares approximations; plasma applications; plasma sheaths; plasma simulation; secondary ion mass spectra; semiconductor doping; BF/sub 3/; PDP1 plasma simulation; PH/sub 3/; SIMS profiles; dose composition; dynamic sheath model; empirical-analytic approach; gas composition; least square fittings; modeling; multi-species plasmas; plasma chemistry; plasma chemistry analysis; plasma composition; plasma doping processes; plasma ion implantation doping; Gases; Nuclear and plasma sciences; Plasma chemistry; Plasma immersion ion implantation; Plasma sheaths; Plasma simulation; Plasma sources; Safety; Semiconductor device doping; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Science, 1997. IEEE Conference Record - Abstracts., 1997 IEEE International Conference on

Conference_Location

San Diego, CA, USA

ISSN

0730-9244

Print_ISBN

0-7803-3990-8

Type

conf

DOI

10.1109/PLASMA.1997.604448

Filename

604448