Research on the power loss and junction temperature of power semiconductor devices for inverter

Author

Azuma, Satoshi ; Kimata, Masahiro ; Seto, Makoto ; Jiang, Xinjian ; Lu, Haiwei ; Xu, Dewei ; Huang, Lipei

Author_Institution

Ind. Electron. & Syst. Lab., Mitsubishi Electr. Corp., Hyogo, Japan

fYear

1999

fDate

1999

Firstpage

183

Abstract

A new calculation method to estimate the power loss and the working temperature of IGBT and diode devices in an inverter is presented. This method is based on the measurement data of the IGBT´s transient and steady state characteristics under different conditions and the thermal equivalent network model of the actual system. Finally, an experiment of a drive system including an inverter and a permanent magnet synchronous motor was done. The result shows that the calculation program is very effective for the thermal design of inverters

Keywords

insulated gate bipolar transistors; invertors; losses; permanent magnet motors; power semiconductor diodes; synchronous motor drives; thermal analysis; IGBT; diode devices; inverter; junction temperature; permanent magnet synchronous motor; power loss estimation; power semiconductor devices; steady state characteristics; thermal design; thermal equivalent network model; transient characteristics; working temperature estimation; Cities and towns; Insulated gate bipolar transistors; Power semiconductor devices; Power system modeling; Pulse width modulation; Pulse width modulation inverters; Steady-state; Synchronous motors; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Vehicle Electronics Conference, 1999. (IVEC '99) Proceedings of the IEEE International

Conference_Location

Changchun

Print_ISBN

0-7803-5296-3

Type

conf

DOI

10.1109/IVEC.1999.830658

Filename

830658