DocumentCode :
1801243
Title :
Radiation performance of Harris´ 64K SOS SRAMs
Author :
Newman, W.H.
Author_Institution :
Harris Semiconductor., Melbourne, FL, USA
fYear :
1994
fDate :
34535
Firstpage :
15
Lastpage :
19
Abstract :
Radiation data on Harris´ 1.2 μm SOS 64K×1 SRAM (HS-65643RH) and 8K×8 SRAM (HS-65647RH) are given. These results include total dose performance, dose rate upset levels, and single event upset (SEU) phenomena.
Keywords :
SRAM chips; field effect memory circuits; radiation effects; radiation hardening (electronics); 1.2 micron; 64 Kbit; HS-65643RH; HS-65647RH; Harris; SEU phenomena; SOS SRAMs; Si-Al2O3; dose rate upset levels; radiation performance; single event upset; total dose performance; Annealing; Capacitors; Circuit synthesis; Distributed amplifiers; Random access memory; Single event upset; Stability; Temperature distribution; Temperature sensors; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation Effects Data Workshop, 1994 IEEE
Print_ISBN :
0-7803-2022-0
Type :
conf
DOI :
10.1109/REDW.1994.633030
Filename :
633030
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1801243
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