• DocumentCode
    1801243
  • Title

    Radiation performance of Harris´ 64K SOS SRAMs

  • Author

    Newman, W.H.

  • Author_Institution
    Harris Semiconductor., Melbourne, FL, USA
  • fYear
    1994
  • fDate
    34535
  • Firstpage
    15
  • Lastpage
    19
  • Abstract
    Radiation data on Harris´ 1.2 μm SOS 64K×1 SRAM (HS-65643RH) and 8K×8 SRAM (HS-65647RH) are given. These results include total dose performance, dose rate upset levels, and single event upset (SEU) phenomena.
  • Keywords
    SRAM chips; field effect memory circuits; radiation effects; radiation hardening (electronics); 1.2 micron; 64 Kbit; HS-65643RH; HS-65647RH; Harris; SEU phenomena; SOS SRAMs; Si-Al2O3; dose rate upset levels; radiation performance; single event upset; total dose performance; Annealing; Capacitors; Circuit synthesis; Distributed amplifiers; Random access memory; Single event upset; Stability; Temperature distribution; Temperature sensors; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop, 1994 IEEE
  • Print_ISBN
    0-7803-2022-0
  • Type

    conf

  • DOI
    10.1109/REDW.1994.633030
  • Filename
    633030
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1801243