• DocumentCode
    1801252
  • Title

    SEP characterization of 1M EEPROMs from SEEQ and Hybrid Memory

  • Author

    Poivey, Christian ; Garnier, P. ; Beaucour, Jérome ; Liebler, Thomas ; Guyomard, Daniel

  • Author_Institution
    Matra Marconi Space, Velizy Villacoublay, France
  • fYear
    1994
  • fDate
    34535
  • Firstpage
    20
  • Lastpage
    25
  • Abstract
    SEEQ 28C010 and Hybrid Memory MEM8129 1M EEPROMs were tested to heavy ions. Results showed a high SEP sensitivity especially during write cycles. These results lead to application limitations for use in space programs.
  • Keywords
    CMOS memory circuits; EPROM; MOS memory circuits; integrated circuit testing; ion beam effects; 1 Mbit; 28C010; EEPROMs; Hybrid Memory devices; MEM8129; SEEQ devices; SEP characterization; application limitations; heavy ions; high SEP sensitivity; space programs; write cycles; CMOS process; Decoding; EPROM; Insulation; Metallization; Nonvolatile memory; Space stations; Space technology; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop, 1994 IEEE
  • Print_ISBN
    0-7803-2022-0
  • Type

    conf

  • DOI
    10.1109/REDW.1994.633031
  • Filename
    633031
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1801252