DocumentCode :
1801252
Title :
SEP characterization of 1M EEPROMs from SEEQ and Hybrid Memory
Author :
Poivey, Christian ; Garnier, P. ; Beaucour, Jérome ; Liebler, Thomas ; Guyomard, Daniel
Author_Institution :
Matra Marconi Space, Velizy Villacoublay, France
fYear :
1994
fDate :
34535
Firstpage :
20
Lastpage :
25
Abstract :
SEEQ 28C010 and Hybrid Memory MEM8129 1M EEPROMs were tested to heavy ions. Results showed a high SEP sensitivity especially during write cycles. These results lead to application limitations for use in space programs.
Keywords :
CMOS memory circuits; EPROM; MOS memory circuits; integrated circuit testing; ion beam effects; 1 Mbit; 28C010; EEPROMs; Hybrid Memory devices; MEM8129; SEEQ devices; SEP characterization; application limitations; heavy ions; high SEP sensitivity; space programs; write cycles; CMOS process; Decoding; EPROM; Insulation; Metallization; Nonvolatile memory; Space stations; Space technology; Testing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation Effects Data Workshop, 1994 IEEE
Print_ISBN :
0-7803-2022-0
Type :
conf
DOI :
10.1109/REDW.1994.633031
Filename :
633031
Link To Document :
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