DocumentCode
1801398
Title
Observations of single event failure in power MOSFETs
Author
Nichols, Donald K. ; McCarty, Kenneth P. ; Coss, James R. ; Waskiewicz, Al ; Groninger, Jerry ; Oberg, Dennis ; Wert, Jerry ; Majewski, Peter ; Koga, Rocky
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fYear
1994
fDate
34535
Firstpage
41
Lastpage
54
Abstract
This first compendium of single event test data for power MOSFETs provides failure thresholds from burnout or gate rupture for over 100 devices of eight manufacturers. Ordering the data has also provided some useful insights.
Keywords
failure analysis; power MOSFET; radiation effects; semiconductor device reliability; semiconductor device testing; burnout; failure thresholds; gate rupture; power MOSFETs; single event failure; single event test data; Aerospace testing; Current measurement; Laboratories; MOSFETs; Manufacturing; Power transistors; Propulsion; Space technology; Temperature; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop, 1994 IEEE
Print_ISBN
0-7803-2022-0
Type
conf
DOI
10.1109/REDW.1994.633035
Filename
633035
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