DocumentCode :
1801961
Title :
Analysis and optimization of CMOS LNA noise performance with channel resistance
Author :
Chen, Jiwei ; Shi, Bingxue
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Volume :
3
fYear :
2002
fDate :
2002
Abstract :
Channel resistance cannot be ignored when CMOS circuits operate at radio frequency (RF). Low noise amplifier (LNA) is a very important block in CMOS RF transceiver. The impact of channel resistance on the noise performance of LNA is thoroughly studied and analyzed, and new formulae are proposed systematically in this paper. Furthermore, revised noise figure optimization technique is presented. All of this work will be very instructive for the design of high performance LNA.
Keywords :
CMOS analogue integrated circuits; MMIC amplifiers; circuit optimisation; field effect MMIC; integrated circuit noise; transceivers; CMOS; LNA; RF transceiver; channel resistance; noise figure optimization technique; noise performance; CMOS technology; Circuit noise; Cutoff frequency; Impedance matching; Inductors; Noise figure; Parasitic capacitance; Performance analysis; Radio frequency; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2002. ISCAS 2002. IEEE International Symposium on
Print_ISBN :
0-7803-7448-7
Type :
conf
DOI :
10.1109/ISCAS.2002.1010281
Filename :
1010281
Link To Document :
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