Title :
Catalytic hydrogen peroxide decomposition on La1-xSrxCoO3-δ perovskite oxide
Author :
Dam, Van-Anh T. ; Olthuis, W. ; Bergveld, P. ; van den Berg, A.
Author_Institution :
MESA Res. Inst., Twente Univ., Netherlands
Abstract :
Lanthanide perovskite oxides are mentioned as material for hydrogen peroxide sensor because they can catalytically decompose hydrogen peroxide in an aqueous medium. The catalytic properties of these perovskite oxides to hydrogen peroxide are suggested due to their oxygen vacancies influenced by the oxide non-stoichiometry. In this paper, we investigate the catalytic hydrogen peroxide decomposition of a La1-xSrxCoO3-δ thin film with x = 0.7 for sensing application. The oxygen vacancy concentration in the oxide is estimated via the work function measurement using an electrolyte metal oxide semiconductor field effect transistor (EMOSFET) with a platinum remote gate. The experimental results show the catalytic properties of this oxide to hydrogen peroxide increases with increasing its non-stoichiometry, x.
Keywords :
MOSFET; catalysis; chemical sensors; chemical variables measurement; decomposition; hydrogen compounds; thin film devices; H2O2; LaSrCoO; aqueous medium; catalytic hydrogen peroxide decomposition; catalytic property; electrolyte metal oxide semiconductor field effect transistor EMOSFET; hydrogen peroxide sensor; lanthanide perovskite oxides; oxide nonstoichiometry; oxygen vacancy concentration; platinum remote gate; sensing application; thin film; work function measurement; Doping; FETs; Gas detectors; Laser beams; Platinum; Pulse measurements; Pulsed laser deposition; Semiconductor device measurement; Strontium; Temperature sensors;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on
Print_ISBN :
0-7803-8994-8
DOI :
10.1109/SENSOR.2005.1497453