Intense pulsed heavy ion beam acceleration using bipolar pulse for implantation to semiconductor

Summary form only given, as follows. Intense pulsed heavy ion beam (HIB) is expected to be applied for pulsed ion implantation to semiconductor since anneal-less process is expected. In the application the purity of the ion beam is very important. However, since the purity of HIB produced in the conventional pulsed power ion diodes are usually very poor and they are not possible to be used in those applications. To improve the purity of the ion beams new type of pulsed power ion accelerator is proposed. The concept of the accelerator is shown in the figure. The accelerator consists of two acceleration gaps (an ion source gap and a post acceleration gap) and a drift tube and a bipolar pulse is used to accelerate the ion beam. In the accelerator purity of the ion beam is expected to be enhanced. As the first step of the development of the accelerator, the characteristics of Br-type magnetically insulated diode was evaluated, which will be used as the 1st gap of the accelerator. An active ion source of carbon plasma gun and a surface flashover ion source were used in the diode. The ion current density, ion species, energy spectrum were evaluated by a Thomson parabola spectrometer, filtered ion pinhole camera, biased ion corrector. In the paper, the result of the experiment is described with the principle and the design concept of the proposed accelerator.