DocumentCode
1802817
Title
Frequency stability of wafer-scale encapsulated MEMS resonators
Author
Kim, Bongsang ; Candler, Rob N. ; Hopcroft, Matthew ; Agarwal, Manu ; Park, Woo-Tae ; Kenny, Thomas W.
Author_Institution
Departments of Mech. & Electr. Eng., Stanford Univ., CA, USA
Volume
2
fYear
2005
fDate
5-9 June 2005
Firstpage
1965
Abstract
This paper presents an investigation of the long-term frequency stability of wafer-scale encapsulated silicon MEMS resonators. Two aspects of stability were examined: long-term stability over time and temperature-related hysteresis. Encapsulated resonators were tested over a period of 8,000 hours in constant environmental temperature of 25°C ± 0.1°C. No measurable drift, burn-in time, or other changes in resonant frequencies were detected. Another experiment was performed to investigate the stability of the resonators with temperature cycling. The resonant frequency was measured between each cycle for more than 450 temperature cycles from -50°C to +80°C. Additional data is presented for short-term hysteresis measurements -10°C to +80°C temperature cycle. No detectable hysteresis was observed in either of the temperature cycle experiments. These series of experiments demonstrate resonant frequency stability of wafer-scale silicon based MEMS resonators.
Keywords
encapsulation; frequency stability; micromechanical resonators; wafer-scale integration; -50 to 80 C; 8000 hours; frequency stability; resonant frequency; temperature cycling; temperature related hysteresis; wafer scale encapsulated MEMS resonators; Circuit stability; Encapsulation; Etching; Frequency measurement; Hysteresis; Micromechanical devices; Resonant frequency; Silicon; Temperature; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on
Print_ISBN
0-7803-8994-8
Type
conf
DOI
10.1109/SENSOR.2005.1497485
Filename
1497485
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