High power handling capability of movable-waveguide direct contact MEMS switches

Author

Soda, S. ; Yoshida, Y. ; Hangai, M. ; Nishino, T. ; Izuo, S. ; Taguchi, M.

Author_Institution

R & D Center, Mitsubishi Electr. Corp. Adv. Technol., Amagasaki, Japan

Volume

2

fYear

2005

fDate

5-9 June 2005

Firstpage

1990

Abstract

The authors presented the characteristics of high power handling capability with direct contact MEMS switches. The switch has a movable-waveguide, fabricated on a silicon cavity. Two types of MEMS switches with different number of contact points were fabricated. In high power handling experiments with hot switching mode, a multiple-contact type switch failed at 1.6 W in 7 GHz RF signal, while a single-contact type switch was succeeded up to 2.4 W. These results were considered from the viewpoint of contact force and surface asperities according to the relation between input power and insertion loss.

Keywords

micromachining; microswitches; microwave switches; waveguide components; 1.6 W; 7 GHz; contact force; high power handling capability; hot switching mode; movable waveguide direct contact MEMS switches; multiple contact type switch; surface asperity; Biomembranes; Communication switching; Contacts; Electrodes; Gold; Microswitches; Research and development; Silicon compounds; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on

Print_ISBN

0-7803-8994-8

Type

conf

DOI

10.1109/SENSOR.2005.1497491

Filename

1497491