The design of SiGe HBT balanced broadband low noise amplifier

Author

Zi-xu, Wang ; Wei-Ming, Yang ; Ju-hong, Peng ; Jian-xin, Chen ; Wan-Bo, Xie ; Chen, Shi

Author_Institution

Sch. of Phys. & Electron. Technol., Hubei Univ., Wuhan

Volume

1

fYear

2008

fDate

21-24 April 2008

Firstpage

233

Lastpage

236

Abstract

A balanced-broadband low noise amplifier (LNA) was designed with the FR4 substrate, using packaged SiGe HBTs BFP640 and chip type passive components. The design principle and technology features of the structure of the balanced LNA were described. The computer simulated results indicate that this SiGe balanced LNA has the advantages of the noise figure less than 0.9 dB over 0.8 GHz to 1.7 GHz range, the high gain of 37 dB, the input and output reflected coefficients are all less than -50 dB.

Keywords

Ge-Si alloys; UHF amplifiers; bipolar transistor circuits; heterojunction bipolar transistors; low noise amplifiers; wideband amplifiers; BFP640 HBTs; FR4 substrate; SiGe; SiGe HBT balanced broadband low noise amplifier; balanced LNA; chip type passive components; design principle; frequency 0.8 GHz to 1.7 GHz; gain; gain 37 dB; input reflection coefficients; noise figure; output reflection coefficients; Broadband amplifiers; Computational modeling; Computer simulation; Gain; Germanium silicon alloys; Heterojunction bipolar transistors; Low-noise amplifiers; Noise figure; Packaging; Silicon germanium; Broadband; Low Noise Amplifier; SiGe HBT;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology, 2008. ICMMT 2008. International Conference on

Conference_Location

Nanjing

Print_ISBN

978-1-4244-1879-4

Electronic_ISBN

978-1-4244-1880-0

Type

conf

DOI

10.1109/ICMMT.2008.4540349

Filename

4540349