0.35um SiGe BiCMOS front-end amplifier for 10Gb/s optical receiver

Author

Fenfei, Hou ; Jingxing, Duan

Author_Institution

Sch. of Phys. Sci. & Technol., Nanjing Normal Univ., Nanjing

Volume

1

fYear

2008

fDate

21-24 April 2008

Firstpage

249

Lastpage

252

Abstract

A 10Gb/s front-end amplifier for optical receiver is realized in a 0.35um SiGe BiCMOS technology. It combines a preamplifier and a limiting amplifier and both are realized with differential architecture. The preamplifier is realized as a transimpedance amplifier with common base input stage. The limiting amplifier consist two stages of Cherry-Hooper architecture. The Simulation shows that the amplifier achieves gain of 102.2dB with constant output swing (450 mVp-p) at a bit rate of 10Gb/s.

Keywords

BiCMOS integrated circuits; optical receivers; preamplifiers; BiCMOS technology; Cherry-Hooper architecture; bipolar complementary metal-oxide-semiconductor; front-end amplifier; gain 102.2 dB; limiting amplifier; optical receiver; preamplifier; size 0.35 mum; transimpedance amplifier; Bandwidth; BiCMOS integrated circuits; Circuit noise; Differential amplifiers; Germanium silicon alloys; Optical amplifiers; Optical receivers; Preamplifiers; Semiconductor optical amplifiers; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology, 2008. ICMMT 2008. International Conference on

Conference_Location

Nanjing

Print_ISBN

978-1-4244-1879-4

Electronic_ISBN

978-1-4244-1880-0

Type

conf

DOI

10.1109/ICMMT.2008.4540353

Filename

4540353