Generation of intense pulsed ion beams by Br magnetically insulated ion diodes

Summary form only given, as follows. Intense pulsed heavy ion beams (HIB) of nitrogen, carbon, aluminum, etc. are expected to be applied to materials processing such as surface heat treatment, ion implantation etc. To apply the pulsed power ion diode to those applications we are developing two types of Br type magnetically insulated ion diode, i.e. a high impedance diode and a low impedance diode. In the high impedance diode a coaxial plasma gun was used as an ion source. The diode was driven by a high impedance pulsed power system (output parameter; 200 kV, 2 kA, 200 ns) where a pulse-forming network and step up transformer are used. On the other hand, in the low impedance diode a flashboard anode is used and the anode plasma is produced by the irradiation of electrons. The diode was drive by a Blumlein pulse forming line (output parameter; 600 kV, 24 kA, 60 ns). The ion current density, ion species, energy, and brightness were evaluated for both type of ion diode. A Thomson parabola spectrometer, filtered ion pinhole camera and biased ion corrector are used in the experiment.