Title :
A Broadband 220-320 GHz Medium Power Amplifier Module
Author :
Tessmann, A. ; Leuther, A. ; Hurm, V. ; Massler, Hermann ; Wagner, Steffen ; Kuri, M. ; Zink, M. ; Riessle, M. ; Stulz, H.-P. ; Schlechtweg, Michael ; Ambacher, Oliver
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys. (IAF), Freiburg, Germany
Abstract :
In this paper, we present the development of an ultra-broadband H-band (220 - 325 GHz) submillimeter-wave monolithic integrated circuit (S-MMIC) medium power amplifier (MPA) module for use in next generation high-resolution imaging systems and communication links operating around 300 GHz. Therefore, a variety of compact amplifier circuits has been developed by using an advanced 35 nm InAlAs/InGaAs based depletion-type metamorphic high electron mobility transistor (mHEMT) technology in combination with grounded coplanar waveguide (GCPW) circuit topology. A three-stage amplifier S-MMIC based on compact cascode devices was realized, demonstrating a maximum gain of 22.2 dB at 294 GHz and a small-signal gain of more than 16 dB over the frequency range from 184 to 312 GHz. Finally, mounting and packaging of the monolithic amplifier chip into a WR-3.4 waveguide module was accomplished with only minor reduction in circuit performance.
Keywords :
MMIC power amplifiers; coplanar waveguides; electronics packaging; high electron mobility transistors; millimetre wave power amplifiers; mountings; network topology; submillimetre wave amplifiers; GCPW; InAlAs-InGaAs; WR-3.4 waveguide module; broadband medium power amplifier module; circuit topology; communication links; compact amplifier circuits; compact cascode devices; frequency 184 GHz to 312 GHz; frequency 220 GHz to 325 GHz; grounded coplanar waveguide; mHEMT; metamorphic high electron mobility transistor; monolithic amplifier chip; mounting; next generation high-resolution imaging systems; packaging; size 35 nm; submillimeter-wave monolithic integrated circuit; three-stage amplifier; ultrabroadband H-band S-MMIC; Frequency measurement; Gain; Logic gates; Power amplifiers; Scattering parameters; Substrates; mHEMTs;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICs), 2014 IEEE
Conference_Location :
La Jolla, CA
DOI :
10.1109/CSICS.2014.6978532
