A 2.7GHz 3.9mW Mesh-BJT LC-VCO with −204dBc/Hz FOM in 65nm CMOS

Author

Chung, T. -W ; Huang, T. -C ; Chung, S. ; Huang, M. -C ; Lin, C. -C ; Chern, C. -H ; Hsueh, F. -L

Author_Institution

Taiwan Semicond. Manuf. Co. (TSMC), San Jose, CA, USA

fYear

2012

fDate

9-12 Sept. 2012

Firstpage

1

Lastpage

4

Abstract

Standards with narrow channel spacing have stringent requirements for in-band phase noise of oscillator, which is dominated by up-converted flicker noise. In this paper, we propose a LC-tank voltage-controlled oscillator (VCO) that utilizes novel Mesh-BJT structure to suppress in-band phase-noise while maintaining low power consumption. The proposed 2.7GHz LC-VCO consumes 3.9mW from a 1.5V supply and the figures of merit (FOM) at 10KHz and 100KHz offsets are -222dBc/Hz and -204dBc/Hz in 65nm CMOS. The Mesh-BJT is compatible with standard CMOS and no extra masks are required. To our best knowledge, this is the best FOM ever reported at low offsets (<;100KHz) for VCO in standard CMOS.

Keywords

CMOS integrated circuits; bipolar transistors; flicker noise; low-power electronics; voltage-controlled oscillators; CMOS; FOM; LC-tank voltage-controlled oscillator; bipolar junction transistor; figures of merit; frequency 10 kHz; frequency 100 kHz; frequency 2.7 GHz; in-band phase noise suppression; low power consumption; mesh-BJT LC-VCO; mesh-BJT structure; narrow channel spacing; power 3.9 mW; size 65 nm; up-converted flicker noise; voltage 1.5 V; 1f noise; CMOS integrated circuits; CMOS process; Phase noise; Standards; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference (CICC), 2012 IEEE

Conference_Location

San Jose, CA

ISSN

0886-5930

Print_ISBN

978-1-4673-1555-5

Electronic_ISBN

0886-5930

Type

conf

DOI

10.1109/CICC.2012.6330566

Filename

6330566