Title :
A Highly Integrated Chipset for 40 Gbps Wireless D-Band Communication Based on a 250 nm InP DHBT Technology
Author :
Carpenter, Sona ; Zhongxia He ; Mingquan Bao ; Zirath, Herbert
Author_Institution :
Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
A highly integrated chipset comprising a transmitter (TX) and a receiver (RX) chip, based on a 250 nm InP DHBT technology for high data rate D-band (110-170 GHz) wireless communication is described. The chipset is designed for point-to-point wireless communication for 4G and 5G mobile communication infrastructure, high data rate backhaul, low-latency wireless HDTV transmission and >40 Gbps transmission over dielectric waveguide. The measured RX conversion gain is 26 dB, with a noise figure of 9 dB. The measured TX conversion gain is 20 dB. A maximum QPSK data rate of 44 Gbps is demonstrated, which exceeds the present state-of-the art in the D-band by a factor of 2.
Keywords :
4G mobile communication; 5G mobile communication; dielectric waveguides; heterojunction bipolar transistors; high definition television; indium compounds; millimetre wave integrated circuits; millimetre wave receivers; quadrature phase shift keying; radio networks; radio transmitters; 4G mobile communication; 5G mobile communication; DHBT technology; InP; QPSK data rate; RX conversion gain; TX conversion gain; bit rate 40 Gbit/s; dielectric waveguide; double heterojunction bipolar transistor; gain 20 dB; gain 26 dB; high data rate backhaul; integrated chipset; low-latency wireless HDTV transmission; noise figure; noise figure 9 dB; point-to-point wireless communication; receiver chip; size 250 nm; transmitter chip; wireless D-band communication; Indium phosphide; Phase shift keying; Radio transmitters; Receivers; Semiconductor device measurement; Wireless communication;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICs), 2014 IEEE
Conference_Location :
La Jolla, CA
DOI :
10.1109/CSICS.2014.6978535
