Title :
An Active Double-Balanced Down-Conversion Mixer in InP/Si BICMOS Operating from 70-110 GHz
Author :
McCue, Jamin J. ; Casto, Matthew ; Li, James C. ; Watson, Paul ; Khalil, Waleed
Author_Institution :
Electroscience Lab., Ohio State Univ., Columbus, OH, USA
Abstract :
In this paper, a double-balanced Gilbert cell down-conversion mixer is demonstrated from 70-110 GHz. The wide bandwidth and high frequency are enabled by the HRL InP/Si BiCMOS process. With an fT of 300 GHz, the available 0.25 μm InP HBTs are used in the signal path while the 90 nm CMOS devices are used for biasing and gain adjustment. The fully differential circuit is implemented using two on-chip Marchand baluns feeding both the LO and RF ports. An IF buffer follows the mixer to improve matching and signal quality for testing. After de-embedding the balun and IF buffer, the mixer core achieves a peak conversion gain of 13 dB, a minimum DSB NF of 10 dB, and an OP1dB of -2 dBm while consuming 5 mA from a 3.3 V supply.
Keywords :
BiCMOS integrated circuits; baluns; buffer circuits; heterojunction bipolar transistors; indium compounds; millimetre wave mixers; silicon; submillimetre wave mixers; BiCMOS process; CMOS devices; HBT; HRL; IF buffer; InP-Si; LO; RF ports; active double-balanced Gilbert cell down-conversion mixer; current 5 mA; differential circuit; frequency 300 GHz; frequency 70 GHz to 110 GHz; gain 13 dB; matching improvement; minimum DSB NF; noise figure 10 dB; on-chip Marchand baluns; peak conversion gain adjustment; signal path quality improvement; size 0.25 mum; size 90 nm; voltage 3.3 V; BiCMOS integrated circuits; CMOS integrated circuits; Gain; Impedance matching; Indium phosphide; Mixers; Noise measurement;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICs), 2014 IEEE
Conference_Location :
La Jolla, CA
DOI :
10.1109/CSICS.2014.6978540
