Title :
An InP MMIC Process Optimized for Low Noise at Cryo
Author :
Nilsson, P.A. ; Schleeh, Joel ; Wadefalk, N. ; Starski, J.P. ; Rodilla, Helena ; Alestig, G. ; Halonen, J. ; Nilsson, B. ; Zirath, Herbert ; Grahn, Jan
Author_Institution :
LowNoiseFactory AB, Mölndal, Sweden
Abstract :
An InP MMIC process was developed and optimized for ultra-low noise amplifiers (LNAs) operating at cryogenic temperature. The amplifiers from the process are working up to 100 GHz. The processed wafers are 4" and can carry more than 4000 3-stage units. For a significant number of 6-20 GHz 3-stage LNAs we have measured an average noise temperature of 5.8 K at ambient temperature of 10 K, state of the art in this frequency range, and 66.3 K at 300K. Associated gain was 35.9 dB (10K) and 33.2 dB (300 K). The standard deviation at room temperature for 47 LNAs was 1.5 K for the noise and 0.3 dB for the gain.
Keywords :
III-V semiconductors; MMIC amplifiers; cryogenic electronics; indium compounds; low noise amplifiers; 3-stage LNAs; InP; MMIC process; cryogenic temperature; frequency 6 GHz to 20 GHz; gain 0.3 dB; gain 33.2 dB; gain 35.9 dB; temperature 1.5 K; temperature 10 K; temperature 293 K to 298 K; temperature 300 K; temperature 66.3 K; ultra-low noise amplifiers; Cryogenics; Gain; HEMTs; Indium phosphide; MMICs; Noise;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICs), 2014 IEEE
Conference_Location :
La Jolla, CA
DOI :
10.1109/CSICS.2014.6978542
