Title :
Backside Process Free Broadband Amplifier MMICs at D-Band and H-Band in 20 nm mHEMT Technology
Author :
Merkle, Thomas ; Leuther, A. ; Koch, Stephan ; Kallfass, I. ; Tessmann, A. ; Wagner, Steffen ; Massler, Hermann ; Schlechtweg, Michael ; Ambacher, Oliver
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany
Abstract :
High gain amplifier MMICs (monolithic microwave integrated circuits) addressing broadband radar and communication applications at the waveguide bands WR-6 (110 - 170 GHz) and WR-3 (220 - 325 GHz) are presented. All circuits are manufactured in the next generation metamorphic high electron mobility transistor (mHEMT) technology featuring 20 nm gate length and a strained 100% InAs channel. The transistors are encapsulated by 0.3 μm and 1.4 μm thick layers of benzocyclobutene (BCB). The 1.4 μm thick BCB layer is used to form shielded thin-film microstrip (TFMS) lines confined at the front-side of the wafer for implementing matching networks. Substrate thinning and backside processing is not required for the function of the amplifiers. The amplifier for WR-6 operates over the whole waveguide band with an average gain of 28 dB. A gain of more than 24 dB was measured for the MMIC from 215 - 290 GHz. All presented MMICs exceed 30% of gain defined bandwidth.
Keywords :
MMIC amplifiers; high electron mobility transistors; microstrip lines; wideband amplifiers; D band; H band; backside process free broadband amplifier MMIC; backside processing; broadband communication applications; broadband radar applications; frequency 110 GHz to 170 GHz; frequency 215 GHz to 290 GHz; frequency 220 GHz to 325 GHz; gain 28 dB; high gain amplifier MMIC; mHEMT technology; matching networks; monolithic microwave integrated circuits; next generation metamorphic high electron mobility transistor technology; shielded thin film microstrip lines; size 0.3 mum; size 1.4 mum; size 20 nm; substrate thinning; Coplanar waveguides; Gain; Indium phosphide; MMICs; Microstrip; Transmission line measurements; mHEMTs;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICs), 2014 IEEE
Conference_Location :
La Jolla, CA
DOI :
10.1109/CSICS.2014.6978544
