DocumentCode :
1804208
Title :
Impact of subthreshold hump on bulk-bias dependence of offset voltage variability in weak and moderate inversion regions
Author :
Sakakibara, K. ; Kumamoto, T. ; Arimoto, K.
fYear :
2012
fDate :
9-12 Sept. 2012
Firstpage :
1
Lastpage :
4
Abstract :
This paper analyzes impact of subthreshold hump on bulk-bias dependence of offset-voltage variability σ(ΔVg) in weak and moderate inversion regions. In nanometer scaled MOSFET with STI structure, full suppression of subthreshold hump is difficult. As a result, σ(ΔVg) behavior differs for every wafer also at operation current level of sub μA. By using ring gate structure, we have found that bulk-bias dependence of σ(ΔVg) becomes predictable even at operation current level of sub nA.
Keywords :
MOSFET; amplifiers; STI structure; bulk-bias dependence; nanometer scaled MOSFET; offset voltage variability; ring gate structure; subthreshold hump; CMOS integrated circuits; Equations; Logic gates; MOSFET circuits; Semiconductor device modeling; Temperature dependence; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Custom Integrated Circuits Conference (CICC), 2012 IEEE
Conference_Location :
San Jose, CA
ISSN :
0886-5930
Print_ISBN :
978-1-4673-1555-5
Electronic_ISBN :
0886-5930
Type :
conf
DOI :
10.1109/CICC.2012.6330574
Filename :
6330574
Link To Document :
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