Title :
Development of High-Efficiency X-Band Outphasing Transmitter
Author :
Chenggang Xie ; Cripe, David ; Reyland, John ; Landt, Don ; Walker, A.
Author_Institution :
Adv. Technol. Center, Rockwell Collins, Inc., Cedar Rapids, IA, USA
Abstract :
We describe an advanced X-band outphasing power amplifier as a promising solution to provide high power output and wide modulation bandwidth for next-generation RF digital communication. Our proposed PA system consists of a high efficiency X-band GaN HEMT based Class-E outphasing PA MMIC.
Keywords :
III-V semiconductors; MMIC power amplifiers; gallium compounds; high electron mobility transistors; radio transmitters; GaN; PA system; X-band outphasing power amplifier; high efficiency X-band GaN HEMT based Class-E outphasing PA MMIC; high-efficiency x-band outphasing transmitter; modulation bandwidth; next generation RF digital communication; MMICs; Modulation; Power amplifiers; Power generation; Radio frequency; Radio transmitters;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICs), 2014 IEEE
Conference_Location :
La Jolla, CA
DOI :
10.1109/CSICS.2014.6978547
