Title :
Direct Down-Conversion 38 GHz GaAs and SiGe Receivers
Author :
Clement, Ryan M. ; Milner, Leigh E. ; Convert, Emmanuelle R. ; Hall, Leonard ; Parker, Michael ; McCulloch, MacCrae G. ; Dadello, Anna ; Wu, Bin ; Harvey, James T. ; Parker, Anthony E. ; Mahon, Simon J.
Author_Institution :
Macom Sydney Design Centre, Sydney, NSW, Australia
Abstract :
Direct down-conversion receivers at Ka band in GaAs and SiGe are measured and analysed with particular attention to linearity. The GaAs receiver is observed to have the superior overall linearity although SiGe has the better second-order behaviour. The linearity is discussed with respect to the requirements of point-to-point radio and for the first time, to the authors´ knowledge, an explanation is established for the effect of third-order distortion in the LNA on the second-order distortion from the complete receiver.
Keywords :
Ge-Si alloys; III-V semiconductors; gallium arsenide; millimetre wave receivers; radio receivers; GaAs; Ka band; LNA; SiGe; direct down-conversion receivers; frequency 38 GHz; linearity; point-to-point radio; second-order behaviour; third-order distortion; Additives; Gallium arsenide; Linearity; Mixers; Radio frequency; Receivers; Silicon germanium;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICs), 2014 IEEE
Conference_Location :
La Jolla, CA
DOI :
10.1109/CSICS.2014.6978549
