Direct Down-Conversion 38 GHz GaAs and SiGe Receivers

Author

Clement, Ryan M. ; Milner, Leigh E. ; Convert, Emmanuelle R. ; Hall, Leonard ; Parker, Michael ; McCulloch, MacCrae G. ; Dadello, Anna ; Wu, Bin ; Harvey, James T. ; Parker, Anthony E. ; Mahon, Simon J.

Author_Institution

Macom Sydney Design Centre, Sydney, NSW, Australia

fYear

2014

fDate

19-22 Oct. 2014

Firstpage

1

Lastpage

4

Abstract

Direct down-conversion receivers at Ka band in GaAs and SiGe are measured and analysed with particular attention to linearity. The GaAs receiver is observed to have the superior overall linearity although SiGe has the better second-order behaviour. The linearity is discussed with respect to the requirements of point-to-point radio and for the first time, to the authors´ knowledge, an explanation is established for the effect of third-order distortion in the LNA on the second-order distortion from the complete receiver.

Keywords

Ge-Si alloys; III-V semiconductors; gallium arsenide; millimetre wave receivers; radio receivers; GaAs; Ka band; LNA; SiGe; direct down-conversion receivers; frequency 38 GHz; linearity; point-to-point radio; second-order behaviour; third-order distortion; Additives; Gallium arsenide; Linearity; Mixers; Radio frequency; Receivers; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium (CSICs), 2014 IEEE

Conference_Location

La Jolla, CA

Type

conf

DOI

10.1109/CSICS.2014.6978549

Filename

6978549