Title :
Diverse Accessible Heterogeneous Integration (DAHI) at Northrop Grumman Aerospace Systems (NGAS)
Author :
Gutierrez-Aitken, Augusto ; Hennig, Kelly ; Scott, D. ; Sato, Kiminori ; Chan, W. ; Poust, Benjamin ; Zeng, Xuan ; Thai, Khanh ; Nakamura, Eric ; Kaneshiro, Eric ; Lin, Nancy ; Monier, Cedric ; Smorchkova, Ioulia ; Oyama, Bert ; Oki, Aaron ; Kagiwada, Rey
Author_Institution :
Northrop Grumman Aerosp. Syst., Redondo Beach, CA, USA
Abstract :
Northrop Grumman Aerospace Systems (NGAS) under the Diverse Accessible Heterojunction Integration (DAHI) DARPA program is developing heterogeneous integration processes, process design kit (PDK) and thermal analysis tools to integrate deep submicron CMOS, Indium Phosphide (InP) heterojunction bipolar transistors (HBTs), Gallium Nitride (GaN) high electron mobility transistors (HEMTs) and high-Q passive technologies for advanced DoD and other government systems.
Keywords :
CMOS integrated circuits; III-V semiconductors; gallium compounds; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; wide band gap semiconductors; DAHI; DARPA program; GaN; HBT; HEMT; InP; NGAS; Northrop Grumman Aerospace Systems; PDK; advanced DoD; deep submicron CMOS; diverse accessible heterogeneous integration; gallium nitride; heterogeneous integration process; heterojunction bipolar transistors; high electron mobility transistors; high-Q passive technology; indium phosphide; process design kit; thermal analysis tools; CMOS integrated circuits; CMOS technology; Gallium nitride; HEMTs; Heterojunction bipolar transistors; Indium phosphide; MODFETs;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICs), 2014 IEEE
Conference_Location :
La Jolla, CA
DOI :
10.1109/CSICS.2014.6978550
